Drain Current and Switching Speed of the Double-Pole Four-Throw RF CMOS Switch

Abstract

Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to provide a plurality of such switches, where the power and area could be reduced as compared to already existing transceiver switch configuration, which is simply a reduction of signal strength during transmission for RF. Our result shows that the peak output currents in these devices are around 0.387 mA and the switching speed is 30 - 31 ps.